features small chip C 230 x 230 x 85 m ut led performance 5.5 mw min. (455C475 nm) blue 2.5 mw min. (500-510 nm) traffc green 2.5 mw min. (520-535 nm) green low forward voltage 2.9C3.0 v typical at 5 ma single wire bond structure class 2 esd rating ? ? C C C ? C ? ? applications mobile phone keypads audio product display lighting mobile appliance keypads automotive applications ? ? ? ? ultrathin? leds c xxx ut230-s0002 crees ultrathin leds combine highly effcient ingan materials with crees proprietary g?sic ? substrate to deliver superior price/performance for blue and green leds. these vertically structured led chips are small in size and require a low forward voltage. crees ut? series chips are tested for conformity to optical and electrical specifcations and the ability to withstand 1000 v esd. applications include keypad backlighting where sub-miniaturization and thinner form factors are required. d a t a s h e e t : c p r 3 c d r e v . e c xxx ut230-s0002 chip diagram top view bottom view g?sic led chip 230 x 230 m sic substrate h = 85 m backside metallization 80 x 80 m gold bond pad 105 m diameter die cross section cathode (-) anode (+) sic substrate bottom surface 150 x 150 m mesa (junction) 176 x 176 m ingan subject to change without notice. www.cree.com
copyright ? 2004-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. 2 cpr3cd rev. e cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes &3 c xxx ut230-s0002 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 5 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c460ut230-s0002 2.7 2.9 3.1 1 21 c470ut230-s0002 2.7 2.9 3.1 1 22 C505UT230-S0002 2.7 2.9 3.2 1 30 c527ut230-s0002 2.7 3.0 3.2 1 35 mechanical specifcations c xxx ut230-s0002 description dimension tolerance p-n junction area (m) 176 x 176 25 top area (m) 230 x 230 25 bottom area (substrate) (m) 150 x 150 25 chip thickness (m) 85 10 au bond pad diameter (m) 105 -5, +15 au bond pad thickness (m) 1.2 0.5 back contact metal area (m) 80 x 80 25 notes: maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the minimum esd ratings shown. the esd classifcation of class 2 is based on sample testing according to mil-std-883e. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 5 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance e. caution: to obtain optimum output effciency, the amount of epoxy used should be characterized based upon the specifc application. 1. 2. 3. 4.
copyright ? 2004-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. 3 cpr3cd rev. e cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ut230-s0002 led chips are sorted to the radiant fux and dominant wavelength bins shown. sorted die sheets contain die from only one bin. sorted die kit (c xxx ut230-s0002) orders may be flled with any or all bins (c xxx ut230-0 xxx ) contained in the kit. all radiant fux values are measured at if = 20 ma and all dominant wavelength values are measured at if = 5 ma. c460ut230-s0002 c460ut230-0101 c460ut230-0102 455 nm 460 nm 465 nm 8.0 mw 5.5 mw dominant wavelength radiant flux c470ut230-s0002 c470ut230-0101 c470ut230-0102 465 nm 470 nm 475 nm 8.0 mw 5.5 mw dominant wavelength radiant flux C505UT230-S0002 c505ut230-0103 c505ut230-0104 c505ut230-0101 c505ut230-0102 500 nm 505 nm 510 nm 5.5 mw 2.5 mw dominant wavelength radiant flux c527ut230-s0002 c527ut230-0104 c527ut230-0105 c527ut230-0106 c527ut230-0101 c527ut230-0102 c527ut230-0103 520 nm 525 nm 530 nm 535 nm 5.0 mw 2.5 mw dominant wavelength radiant flux
copyright ? 2004-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. 4 cpr3cd rev. e cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the ut230 product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. forward current vs forward voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vf (v) if (ma) wavelength shift vs forward current -12.0 -8.0 -4.0 0.0 4.0 8.0 12.0 0 5 10 15 20 25 30 if (ma) shift (nm) 527nm 505nm 470nm relative intensity vs forward voltage 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 if (ma) % relative intensity relative intensity vs. peak wavelength 0 20 40 60 80 100 350 400 450 500 550 600 650 wavelength (nm) relative intensity (%) 460 nm 505 nm 527 nm
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